SSD02N65 2a , 650v , r ds(on) 8 n-ch enhancement mode power mosfet elektronische bauelemente 24-nov-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d n o p g e f h k j m b to - 252 (d - pack) 2n65 rohs compliant product a suffix of -c specifies halogen free description the SSD02N65 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline 100% eas guaranteed green device available marking package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v continuous drain current @v gs =10v 1 t c =25c i d 2 a t c =100c 1.3 a pulsed drain current 2 i dm 4 a total power dissipation 4 t c =25c p d 40 w linear derating factor 0.33 w / c single pulse avalanche energy 3 e as 16 mj single pulse avalanche current i as 3.4 a operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient 1 r ja 62 c / w maximum thermal resistance junction-case 1 r jc 3 c / w 1 gate 3 source 2 drain date code ref. millimeter ref. millimeter min. max. min. max. a 6. 35 6.8 0 j 2.30 ref. b 5.20 5.50 k 0.64 0.90 c 2.15 2 .40 m 0.50 1.1 d 0.45 0.58 n 0.9 1. 65 e 6.8 7.5 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 5 h 0. 64 1.20
SSD02N65 2a , 650v , r ds(on) 8 n-ch enhancement mode power mosfet elektronische bauelemente 24-nov-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 650 - - v v gs =0, i d = 250 a breakdown voltage temperature coefficient bv dss / t j - 0.37 - v/c reference to 25c, i d =1ma gate-threshold voltage v gs(th) 2 - 5 v v ds =v gs , i d =250 a forward transconductance g fs - 1.7 - s v ds =10v, i d =1.0a gate-source leakage current i gss - - 100 na v gs = 30v drain-source leakage current i dss - - 2 a v ds =520v, v gs =0 static drain-source on-resistance 2 r ds(on) - 6.3 8 v gs =10v, i d =1a total gate charge q g - 8 - nc i d =1a v ds =520v v gs =10v gate-source charge q gs - 2.56 - gate-drain (miller) change q gd - 2.67 - turn-on delay time 3 t d(on) - 4.8 - ns v dd =300v i d =1a v gs =10v r g =10 rise time t r - 18.4 - turn-off delay time t d(off) - 10.8 - fall time t f - 23.2 - input capacitance c iss - 290 - pf v gs =0 v ds =25 v f =1.0mhz output capacitance c oss - 25 - reverse transfer capacitance c rss - 4 - guaranteed avalanche characteristics single pulse avalanche energy 5 eas 3.2 - - mj v dd =50v,l=1mh , i as =1.5a source-drain diode diode forward voltage 2 v sd - - 1 v i s =1a, v gs =0 , t j =25c, continuous source current 1,6 i s - - 2 a v d =v g =0, v s =1v pulsed source current 2,6 i sm - - 4 a notes: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2 oz copper. 2. the data tested by pulsed , pulse width Q 300 s , duty cycle Q 2% 3. the eas data shows max. rating . the test condi tion is v dd =50v,v gs =10v,l=1mh,i as =1.5a 4. the power dissipation is limited by 150c, junction temperature 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as i d and i dm , in real applications , should be limited by tota l power dissipation.
SSD02N65 2a , 650v , r ds(on) 8 n-ch enhancement mode power mosfet elektronische bauelemente 24-nov-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
SSD02N65 2a , 650v , r ds(on) 8 n-ch enhancement mode power mosfet elektronische bauelemente 24-nov-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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